FDS8958A-F085

FDS8958A-F085
MOSFETs Transistors Arrays
ON Semiconductor
FDS8958A-F085 d
-
8-SOIC (0.154, 3.90mm Width)
YES
FDS8958A-F085
FDS8958A-F085
MOSFETs Transistors Arrays
ON Semiconductor
FDS8958A-F085 d
-
8-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A 5A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2W
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


captcha

+86-13723477211

sales@fuchaoic.com
0