| ： | TK2P60D(TE16L1,NQ) |
|---|---|
| ： | Single MOSFETs Transistors |
| ： | Toshiba Semiconductor and Storage |
| ： | N-Channel Tape |
| ： | - |
| ： | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| ： | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | PW-MOLD |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | π-MOSVII |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Power Dissipation-Max | 60W Tc |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 280pF |
| Rds On Max | 4.3 Ω |
| Height | 2.3mm |
| Length | 6.5mm |
| Width | 5.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
 | |
| Orignal genuine | Each chip comes from the original factory |
| |
| Main products | Only make original stock |
| |
| Spot inventory | Only make original stock |
| |
| Original stock | Bom Distributio | Affordable Price |
1
0.214877
0.214877
10
0.203846
2.03846
100
0.19344
19.344
500
0.183623
91.8115
1000
0.174361
174.361
