BCM857BV,315

BCM857BV,315
Arrays BJT Transistors
Nexperia USA Inc.
BCM857BV,315 da
-
SOT-563, SOT-666
YES
BCM857BV%2C315
BCM857BV,315
Arrays BJT Transistors
Nexperia USA Inc.
BCM857BV,315 da
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 300mW
Terminal Form FLAT
Base Part Number BCM857
Pin Count 6
Number of Elements 2
Polarity PNP
Configuration SEPARATE, 2 ELEMENTS
Power - Max 300mW
Transistor Application AMPLIFIER
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 175MHz
Max Breakdown Voltage 45V
Frequency - Transition 175MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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