| ： | DSS5160FDB-7 |
|---|---|
| ： | Arrays BJT Transistors |
| ： | Diodes Incorporated |
| ： | DSS5160FDB-7 da |
| ： | - |
| ： | 6-UDFN Exposed Pad |
| ： | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Max Power Dissipation | 405mW |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Case Connection | COLLECTOR |
| Power - Max | 405mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | 550mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 65MHz |
| Max Breakdown Voltage | 60V |
| Frequency - Transition | 65MHz |
| RoHS Status | ROHS3 Compliant |
 | |
| 原装正品 | 每颗芯片都来自原厂 |
| |
| 主要产品 | 只生厂材料 |
| |
| 现货库存 | 只生产原材料 |
| |
| 原装库存 | Bom 单 | 价格实惠 |
1
0.579
0.579
10
0.549057
5.49057
100
0.520808
52.0808
500
0.484159
242.0795
1000
0.459018
459.018
