HN1A01F-GR(TE85L,F

HN1A01F-GR(TE85L,F
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN1A01F-GR(TE85
-
SC-74, SOT-457
YES
HN1A01F-GR%28TE85L%2CF
HN1A01F-GR(TE85L,F
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN1A01F-GR(TE85
-
SC-74, SOT-457
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity PNP
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
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 现货库存       只生产原材料

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原装库存Bom 单价格实惠


: 0.217958

1

0.217958

0.217958

10

0.206753

2.06753

100

0.196182

19.6182

500

0.186209

93.1045

1000

0.176801

176.801

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