L603C

L603C
Arrays BJT Transistors
STMicroelectronics
L603C datasheet
-
PDIP
YES
L603C
L603C
Arrays BJT Transistors
STMicroelectronics
L603C datasheet
-
PDIP
YES
TYPEDESCRIPTION
Mount Through Hole
Mounting Type Through Hole
Package / Case PDIP
Number of Pins 18
Supplier Device Package 18-DIP
Transistor Element Material SILICON
Operating Temperature -25°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 18
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 90V
Max Power Dissipation 1.8W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 400mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number L603
Pin Count 18
Qualification Status Not Qualified
Number of Elements 8
Polarity NPN
Configuration COMPLEX
Power Dissipation 1.8W
Transistor Application SWITCHING
Transistor Type 8 NPN Darlington
Collector Emitter Voltage (VCEO) 90V
Max Collector Current 400mA
Vce Saturation (Max) @ Ib, Ic 2V @ 500μA, 300mA
Collector Emitter Breakdown Voltage 90V
Collector Emitter Saturation Voltage 2V
DC Current Gain-Min (hFE) 1000
Continuous Collector Current 400mA
VCEsat-Max 2 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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