: | PBSS4260PANP,115 |
---|---|
: | Arrays BJT Transistors |
: | Nexperia USA Inc. |
: | PBSS4260PANP,11 |
: | - |
: | 6-UDFN Exposed Pad |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 8 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 1.45W |
Base Part Number | PBSS4260 |
Pin Count | 6 |
Number of Elements | 2 |
Polarity | NPN, PNP |
Element Configuration | Dual |
Power Dissipation | 2W |
Case Connection | COLLECTOR |
Power - Max | 510mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Transistor Type | NPN, PNP |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 90mV @ 50mA, 500mA |
Current - Collector (Ic) (Max) | 2A |
Transition Frequency | 140MHz |
Collector Emitter Saturation Voltage | -100mV |
Frequency - Transition | 140MHz |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 7V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
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原装正品 | 每颗芯片都来自原厂 |
| |
主要产品 | 只生厂材料 |
| |
现货库存 | 只生产原材料 |
|
原装库存 | Bom 单 | 价格实惠 |
1
0.552
0.552
10
0.523585
5.23585
100
0.486778
48.6778
500
0.461489
230.7445
1000
0.437631
437.631