PBSS4260PANP,115

PBSS4260PANP,115
Arrays BJT Transistors
Nexperia USA Inc.
PBSS4260PANP,11
-
6-UDFN Exposed Pad
YES
PBSS4260PANP%2C115
PBSS4260PANP,115
Arrays BJT Transistors
Nexperia USA Inc.
PBSS4260PANP,11
-
6-UDFN Exposed Pad
YES
TYPEDESCRIPTION
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS4260
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 2W
Case Connection COLLECTOR
Power - Max 510mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 90mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 2A
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -100mV
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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原装库存Bom 单价格实惠


: 0.552

1

0.552

0.552

10

0.523585

5.23585

100

0.486778

48.6778

500

0.461489

230.7445

1000

0.437631

437.631

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