| ： | SMA5106 |
|---|---|
| ： | Arrays BJT Transistors |
| ： | Sanken |
| ： | SMA5106 datashe |
| ： | - |
| ： | 12-SIP |
| ： | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 12 Weeks |
| Package / Case | 12-SIP |
| Mounting Type | Through Hole |
| Mount | Through Hole |
| Supplier Device Package | 12-SIP |
| Transistor Element Material | SILICON |
| Product Status | Active |
| Mfr | Sanken |
| Base Product Number | SMA51 |
| Package | Tube |
| Mounting | Through Hole |
| Rad Hardened | No |
| Channel Mode | Enhancement |
| Gate-Source Voltage (Max) | ±10(V) |
| Operating Temp Range | -40C to 150C |
| Package Type | SIP |
| Operating Temperature Classification | Automotive |
| Drain-Source On-Volt | 100(V) |
| Continuous Drain Current | 4(A) |
| Series | -- |
| Published | 2001 |
| Packaging | Tube |
| Operating Temperature | 150°C TJ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Type | Power MOSFET |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 5W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 12 |
| JESD-30 Code | R-PSIP-T12 |
| Qualification Status | Not Qualified |
| Number of Elements | 4 |
| Polarity | N |
| Configuration | COMPLEX |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 4(W) |
| Power - Max | 5W |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | 4 NPN Darlington (Quad) |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Collector Emitter Breakdown Voltage | 120V |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 5A |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.55Ohm |
| Pulsed Drain Current-Max (IDM) | 8A |
| DS Breakdown Voltage-Min | 100V |
| Frequency - Transition | -- |
| Avalanche Energy Rating (Eas) | 16 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
 | |
| 原装正品 | 每颗芯片都来自原厂 |
| |
| 主要产品 | 只生厂材料 |
| |
| 现货库存 | 只生产原材料 |
| |
| 原装库存 | Bom 单 | 价格实惠 |
1
2.452
2.452
10
2.31566
23.1566
100
2.186472
218.6472
500
2.06403
1032.015
1000
1.947953
1947.953
