ZXTD1M832TA

ZXTD1M832TA
Arrays BJT Transistors
Diodes Incorporated
ZXTD1M832TA dat
-
8-VDFN Exposed Pad
YES
ZXTD1M832TA
ZXTD1M832TA
Arrays BJT Transistors
Diodes Incorporated
ZXTD1M832TA dat
-
8-VDFN Exposed Pad
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 832
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation 1.7W
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 110MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTD1M832
Pin Count 10
JESD-30 Code R-PQFP-F10
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 3W
Case Connection COLLECTOR
Power - Max 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2.5A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 150mA, 4A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -240mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) -20V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -4A
Height 1mm
Length 3mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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