: | DTA113ZSATP |
---|---|
: | Pre-Biased BJT Transistors |
: | ROHM Semiconductor |
: | DTA113ZSATP dat |
: | - |
: | SC-72 Formed Leads |
: | YES |
TYPE | DESCRIPTION |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | SC-72 Formed Leads |
Transistor Element Material | SILICON |
Packaging | Tape & Box (TB) |
Published | 1998 |
JESD-609 Code | e1 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Max Operating Temperature | 150°C |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10 |
HTS Code | 8541.21.00.75 |
Voltage - Rated DC | -50V |
Max Power Dissipation | 300mW |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -100mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | DTA113 |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Transistor Application | SWITCHING |
Transistor Type | PNP - Pre-Biased |
Collector Emitter Voltage (VCEO) | 300mV |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 5mA 5V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 250MHz |
Frequency - Transition | 250MHz |
hFE Min | 33 |
Resistor - Base (R1) | 1 k Ω |
Resistor - Emitter Base (R2) | 10 k Ω |
VCEsat-Max | 0.3 V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Orignal genuine | Each chip comes from the original factory |
| |
Main products | Only make original stock |
| |
Spot inventory | Only make original stock |
|
Original stock | Bom Distributio | Affordable Price |