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  • image of Bipolar RF Transistors>2N3495
  • image of Bipolar RF Transistors>2N3495
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Encapsulation
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$32.7040

$3,270.4000

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image of Bipolar RF Transistors>2N3495
image of Bipolar RF Transistors>2N3495
2N3495
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
2N3495
Bipolar RF Transistors
Roving Networks (Microchip Technology)
SMALL-SIGNAL BJT
-
Bulk
0
Product parameters
TYPEDESCRIPTION
MfrRoving Networks (Microchip Technology)
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max400mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)120V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-5AA

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