• image of Single FETs, MOSFETs>AS2M040120P
  • image of Single FETs, MOSFETs>AS2M040120P
AS2M040120P
N-CHANNEL SILICON CARBIDE POWER
-
Bulk
30
:
:

1

$23.1728

$23.1728

10

$20.5968

$205.9680

100

$18.0096

$1,800.9600

500

$15.3664

$7,683.2000

image of Single FETs, MOSFETs>AS2M040120P
image of Single FETs, MOSFETs>AS2M040120P
AS2M040120P
AS2M040120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILICON CARBIDE POWER
-
Bulk
50
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 40A, 20V
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2946 pF @ 1000 V
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