• image of Single FETs, MOSFETs>CGD65A130S2-T13
  • image of Single FETs, MOSFETs>CGD65A130S2-T13
CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.
-
Tape & Reel (TR)
3500
:
:

1

$7.0000

$7.0000

10

$6.0032

$60.0320

100

$4.9952

$499.5200

500

$4.4128

$2,206.4000

1000

$3.9760

$3,976.0000

3500

$3.7184

$13,014.4000

image of Single FETs, MOSFETs>CGD65A130S2-T13
image of Single FETs, MOSFETs>CGD65A130S2-T13
CGD65A130S2-T13
CGD65A130S2-T13
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN8X8.
-
Tape & Reel (TR)
3352
1
Product parameters
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
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