• image of Single FETs, MOSFETs>TP65H150G4LSG
  • image of Single FETs, MOSFETs>TP65H150G4LSG
TP65H150G4LSG
GAN FET N-CH 650V PQFN
-
Tray
3000
:
:

1

$5.6672

$5.6672

10

$5.0848

$50.8480

100

$4.1664

$416.6400

500

$3.5504

$1,775.2000

1000

$2.9904

$2,990.4000

3000

$2.6320

$7,896.0000

image of Single FETs, MOSFETs>TP65H150G4LSG
image of Single FETs, MOSFETs>TP65H150G4LSG
TP65H150G4LSG
TP65H150G4LSG
Single FETs, MOSFETs
Transphorm
GAN FET N-CH 650V PQFN
-
Tray
2834
Product parameters
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTray
Product StatusACTIVE
Package / Case3-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 8.5A, 10V
Power Dissipation (Max)52W (Tc)
Vgs(th) (Max) @ Id4.8V @ 500µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds598 pF @ 400 V
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