1
$1.5904
$1.5904
10
$1.3216
$13.2160
100
$1.0528
$105.2800
500
$0.9520
$476.0000
2500
$0.9520
$2,380.0000
| 类型 | 描述 |
| 制造商 | EPC |
| 系列 | eGaN® |
| 包裹 | 卷带式 (TR) |
| 产品状态 | ACTIVE |
| 包装/箱 | 9-VFBGA |
| 安装类型 | Surface Mount |
| 配置 | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| 工作温度 | -40°C ~ 150°C (TJ) |
| 技术 | GaNFET (Gallium Nitride) |
| 漏源电压 (Vdss) | 100V |
| 电流 - 连续漏极 (Id) @ 25°C | 1.7A, 500mA |
| 输入电容 (Ciss)（最大值）@Vds | 16pF @ 50V, 7pF @ 50V |
| Rds On（最大）@Id、Vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
| 栅极电荷 (Qg)（最大值）@Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Vgs(th)（最大值）@Id | 2.5V @ 100µA, 2.5V @ 20µA |
| 供应商设备包 | 9-BGA (1.35x1.35) |
