• image of FET、MOSFET 阵列>G220P03D32
  • image of FET、MOSFET 阵列>G220P03D32
G220P03D32
MOSFET P+P-CH 30V12A 30W DFN3*3-
-
卷带式 (TR)
5000
:
:

1

$0.6608

$0.6608

10

$0.5712

$5.7120

100

$0.3920

$39.2000

500

$0.3024

$151.2000

1000

$0.2464

$246.4000

2000

$0.2240

$448.0000

5000

$0.2128

$1,064.0000

10000

$0.2016

$2,016.0000

25000

$0.1904

$4,760.0000

50000

$0.1904

$9,520.0000

image of FET、MOSFET 阵列>G220P03D32
image of FET、MOSFET 阵列>G220P03D32
G220P03D32
G220P03D32
FET、MOSFET 阵列
Goford Semiconductor
MOSFET P+P-CH 30V12A 30W DFN3*3-
-
卷带式 (TR)
4960
1
产品参数
PDF(1)
类型描述
制造商Goford Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerVDFN
安装类型Surface Mount
配置2 P-Channel
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大30W (Tc)
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C12A (Tc)
输入电容 (Ciss)(最大值)@Vds1305pF @ 15V
Rds On(最大)@Id、Vgs22mOhm @ 3A, 10V
栅极电荷 (Qg)(最大值)@Vgs25nC @ 10V
Vgs(th)(最大值)@Id2V @ 250µA
供应商设备包8-DFN (3.15x3.05) Dual
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