• image of 单 FET、MOSFET>GT400P10M
  • image of 单 FET、MOSFET>GT400P10M
GT400P10M
MOSFET P-CH 100V 35A TO-263
-
卷带式 (TR)
800
:
:

1

$1.9040

$1.9040

10

$1.5792

$15.7920

100

$1.2544

$125.4400

800

$1.0640

$851.2000

1600

$0.9072

$1,451.5200

2400

$0.8624

$2,069.7600

5600

$0.8288

$4,641.2800

image of 单 FET、MOSFET>GT400P10M
image of 单 FET、MOSFET>GT400P10M
GT400P10M
GT400P10M
单 FET、MOSFET
Goford Semiconductor
MOSFET P-CH 100V 35A TO-263
-
卷带式 (TR)
783
1
产品参数
PDF(1)
类型描述
制造商Goford Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型P-Channel
电流 - 连续漏极 (Id) @ 25°C35A (Tc)
Rds On(最大)@Id、Vgs35mOhm @ 10A, 10V
功耗(最大)106W (Tc)
Vgs(th)(最大值)@Id2.5V @ 250µA
供应商设备包TO-263
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)100 V
栅极电荷 (Qg)(最大值)@Vgs41 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds3073 pF @ 50 V
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