1
$23.9120
$23.9120
10
$22.0528
$220.5280
25
$21.0672
$526.6800
100
$18.8384
$1,883.8400
250
$17.9648
$4,491.2000
500
$17.1024
$8,551.2000
1000
$16.1056
$16,105.6000
| 类型 | 描述 |
| 制造商 | IR (Infineon Technologies) |
| 系列 | CoolSiC™ Gen 2 |
| 包裹 | 卷带式 (TR) |
| 产品状态 | ACTIVE |
| 包装/箱 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| 安装类型 | Surface Mount |
| 工作温度 | -55°C ~ 175°C (TJ) |
| 技术 | SiCFET (Silicon Carbide) |
| 场效应管类型 | N-Channel |
| 电流 - 连续漏极 (Id) @ 25°C | 115A (Tc) |
| Rds On（最大）@Id、Vgs | 18mOhm @ 64.2A, 18V |
| 功耗（最大） | 416W (Tc) |
| Vgs(th)（最大值）@Id | 5.6V @ 13mA |
| 供应商设备包 | PG-TO263-7-12 |
| 驱动电压（最大导通电阻、最小导通电阻） | 15V, 20V |
| Vgs（最大） | +23V, -7V |
| 漏源电压 (Vdss) | 650 V |
| 栅极电荷 (Qg)（最大值）@Vgs | 79 nC @ 18 V |
| 输入电容 (Ciss)（最大值）@Vds | 2792 pF @ 400 V |
