• image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
  • image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
TRENCH >=100V
-
卷带式 (TR)
1800
:
:

1

$6.7760

$6.7760

10

$6.1152

$61.1520

25

$5.8352

$145.8800

100

$5.0624

$506.2400

250

$4.8384

$1,209.6000

500

$4.4128

$2,206.4000

1800

$3.8416

$6,914.8800

image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
单 FET、MOSFET
IR (Infineon Technologies)
TRENCH >=100V
-
卷带式 (TR)
0
1
产品参数
PDF(1)
类型描述
制造商IR (Infineon Technologies)
系列OptiMOS™ 6
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱16-PowerSOP Module
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C26A (Ta), 222A (Tc)
Rds On(最大)@Id、Vgs2.6mOhm @ 115A, 10V
功耗(最大)3.8W (Ta), 278W (Tc)
Vgs(th)(最大值)@Id3.6V @ 169µA
供应商设备包PG-HDSOP-16-2
驱动电压(最大导通电阻、最小导通电阻)8V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)120 V
栅极电荷 (Qg)(最大值)@Vgs88 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds6500 pF @ 60 V
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