• image of 单 FET、MOSFET>SIRA54ADP-T1-RE3
  • image of 单 FET、MOSFET>SIRA54ADP-T1-RE3
SIRA54ADP-T1-RE3
N-CHANNEL 40 V (D-S) MOSFET POWE
-
卷带式 (TR)
3000
:
:

1

$2.0832

$2.0832

10

$1.7248

$17.2480

100

$1.3776

$137.7600

500

$1.1648

$582.4000

1000

$0.9856

$985.6000

3000

$0.9408

$2,822.4000

6000

$0.9072

$5,443.2000

9000

$0.8736

$7,862.4000

image of 单 FET、MOSFET>SIRA54ADP-T1-RE3
image of 单 FET、MOSFET>SIRA54ADP-T1-RE3
SIRA54ADP-T1-RE3
SIRA54ADP-T1-RE3
单 FET、MOSFET
Vishay / Siliconix
N-CHANNEL 40 V (D-S) MOSFET POWE
-
卷带式 (TR)
6000
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱PowerPAK® SO-8
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C36.2A (Ta), 128A (Tc)
Rds On(最大)@Id、Vgs2.2mOhm @ 15A, 10V
功耗(最大)5.2W (Ta), 65.7W (Tc)
Vgs(th)(最大值)@Id2.5V @ 250µA
供应商设备包PowerPAK® SO-8
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)+20V, -16V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs70 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds3850 pF @ 20 V
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